Under Voltage Control: Nb2O5 Based Locally Active Threshold Switches (A02)

• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 528378584

Threshold switches allow to implement signal amplification in a two-terminal device. One possible application is to solve NP-hard problems, that are very difficult to solve using the von Neumann architecture, using coupled oscillator circuits. In Phase 1 the solution for one such example problem is guiding the research. In line with the subject of this TRR oscillator cells will be integrated into the BEOL of CMOS chips, where the reconfigurable coupling itself is to be realized by conventional transistor circuits in Phase 1. In Phase 2 the conventional transistors will be replaced by BEOL compatible transistors developed within the TRR, such as RFETs or 2D-materials based devices, and additional applications of the threshold switches such as neurons and similar device will be explored.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 404: Next Generation Electronics with Active Devices in Three Dimensions (Active-3D)
• Applicant Institution: Technische Universität Dresden
• Co-Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Heads: Dr.-Ing. Stefan Slesazeck; Professor Dr. Ronald Tetzlaff