Detailseite
Projekt
Long wavelength GaInNAs Quantum Wells and Quantum Dots for GaAs based lasers up to 1.6 µm
Antragsteller
Professor Dr. Alfred Forchel
Fachliche Zuordnung
Experimentelle Physik der kondensierten Materie
Förderung
Förderung von 2005 bis 2010
Projektkennung
Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5453588
The main goal of the proposal is to develop novel gain materials for long wavelength continuous wave laser operation on GaAs. During the last few years the GaInNAs material system has permitted to develop high quality vertical surface emitters and edge emitters at 1.3 ¿m as well as the first realization of lasers in the 1.5 ¿m range. In order to push the wavelength limit to 1.6 ¿m and beyond to fully cover the second telecom window severe material challenges have to be met. These structures require either the addition of high concentrations of nitrogen or the introduction of GaInNAs quantum dots in ternary or quaternary quantum wells. In both cases low temperature growth conditions minimizing the nonradiative recombination rate have to be developed. The main focus will be on the optimization of active materials suitable for the realization of a vertical cavity surface emitting laser (VCSEL) with an emission wavelength of 1.55 ¿m and ridge waveguide lasers at 1.6 ¿m. Fundamental material parameters (e.g. band offsets in GaInNAs/- GaAs heterostructures) and structural properties of layers with high nitrogen concentration will be investigated in cooperation with the group of E. Umbach and will be used for a systematic material and device optimization. For studies of injection locking in the group of C. Chang-Hasnain at Berkeley, 1.3 ¿m VCSEL layers will be grown.
DFG-Verfahren
Sachbeihilfen
Internationaler Bezug
USA
