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Nanostructuring of homo- and heteroepitaxial light emitters for enhanced quantum efficiency using photonic crystal components

Applicant Dr. Stephan Figge
Subject Area Experimental Condensed Matter Physics
Term from 2003 to 2010
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 5470211
 
The aim of the project is the realization of electrically pumped quantum-dot lasers based on group-III-nitride semiconductor compounds. Moreover, the structures realized in the project will be an important basis for theoretical and experimental work of other projects within the research group. First of all, the realization of QD lasers will require studies of the epitaxial growth of InGaN QDs. Both molecular beam epitaxy and metalorganic vapour phase epitaxy will be applied for this purpose. Different approaches for QD growth have to be followed up: the Stranski-Krastanow growth mode of islands on highly lattice-mismatched templates, the exploitation of anti-surfactants for island formation, and the selective growth on substrates prepared by focussed ion beams. However, the first basic growth studies on QD formation shall result rather soon in device-relevant heterostructures. The detailed study and subsequent optimization of these structures will form another main subject of the project. These heterostructures will also be required for fruitful cooperation with other projects of the research group, aiming at an understanding of the physical processes in QD lasers. This applies in particular to the optical studies on single QDs in project I-2, and the comparison of experimental data with theoretical modelling conducted in the projects III-2 and III-3. The feedback from these projects will be a useful input for a further optimization of the QD lasers.
DFG Programme Research Units
 
 

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