Detailseite
Projekt
Nanostructuring of homo- and heteroepitaxial light emitters for enhanced quantum efficiency using photonic crystal components
Antragsteller
Dr. Stephan Figge
Fachliche Zuordnung
Experimentelle Physik der kondensierten Materie
Förderung
Förderung von 2003 bis 2010
Projektkennung
Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5470211
The aim of the project is the realization of electrically pumped quantum-dot lasers based on group-III-nitride semiconductor compounds. Moreover, the structures realized in the project will be an important basis for theoretical and experimental work of other projects within the research group. First of all, the realization of QD lasers will require studies of the epitaxial growth of InGaN QDs. Both molecular beam epitaxy and metalorganic vapour phase epitaxy will be applied for this purpose. Different approaches for QD growth have to be followed up: the Stranski-Krastanow growth mode of islands on highly lattice-mismatched templates, the exploitation of anti-surfactants for island formation, and the selective growth on substrates prepared by focussed ion beams. However, the first basic growth studies on QD formation shall result rather soon in device-relevant heterostructures. The detailed study and subsequent optimization of these structures will form another main subject of the project. These heterostructures will also be required for fruitful cooperation with other projects of the research group, aiming at an understanding of the physical processes in QD lasers. This applies in particular to the optical studies on single QDs in project I-2, and the comparison of experimental data with theoretical modelling conducted in the projects III-2 and III-3. The feedback from these projects will be a useful input for a further optimization of the QD lasers.
DFG-Verfahren
Forschungsgruppen
Beteiligte Personen
Professor Dr. Detlef Hommel; Professorin Dr. Tania Paskova
