SPP 2312: Energy Efficient Power Electronics "GaNius"
Subject Area
Computer Science, Systems and Electrical Engineering
Term
since 2021
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 441885089
Project Description
No abstract available
DFG Programme
Priority Programmes
International Connection
Italy
Projects
Aluminum Nitride for vertical Power Electronics
(Applicants
Waag, Andreas
;
Witzigmann, Bernd
)
Bidirectional-GaN-based Soft-switched Current Source Converters
(Applicant
Lobo Heldwein, Marcelo
)
Characterization and Application of GaN-HEMTs at Cryogenic Temperatures
(Applicant
Hiller, Marc
)
Conformal 3D Ceramic-Based Intelligent GaN Power Systems-in-Package (3D-CeraGaN)
(Applicants
Kallfass, Ingmar
;
Zimmermann, André
)
Coordination Funds
(Applicant
Dieckerhoff, Sibylle
)
Determining the Temperature of GaN based power semiconductors based on Temperature Sensitive Parameters (TSEP)
(Applicant
Bakran, Mark-Matthias
)
Electronic transport of polarization-induced, two-dimensional electron gases with extremely high sheet carrier density for ScAlN/GaN-based power devices (ScNius)
(Applicants
Ambacher, Oliver
;
Heitmann, Johannes
)
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN)
(Applicants
Lindemann, Andreas
;
Mallwitz, Regine
)
GaN-Enabled Three-Phase PFC-Rectifier Family in CCM-Boost Mode Employing Only Two HF-Switches and Inductors for Low Common Mode and Simplified Power Architectures
(Applicant
Schafmeister, Frank
)
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)
(Applicants
Grabmaier, Anton
;
Pfost, Martin
)
High Frequency Switching Power Converters based on AlN-based Power Transistors
(Applicants
Dieckerhoff, Sibylle
;
Hilt, Oliver
;
Wentzel, Andreas
)
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification
(Applicants
Kallfass, Ingmar
;
März, Martin
)
Modelling and characterization of GaN-HEMT devices with respect to effects of charge carrier trapping
(Applicants
Hiller, Marc
;
Sack, Martin
)
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems
(Applicants
Dieckerhoff, Sibylle
;
Pfost, Martin
)
Performance Evaluation of Soft-and Hard-Switched Inverters Based on Monolithically-Integrated Bidirectional GaN Devices
(Applicant
Liserre, Ph.D., Marco
)
Planar and Vertical Junctions for innovative GaN-Based High-Power Devices
(Applicants
Christen, Jürgen
;
Vescan, Andrei
)
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics
(Applicants
Basler, Thomas
;
Friebe, Jens
)
Toward chip-scale Off-line Power supplies in GaN: Advancing monolithic GaN analog and mixed signal circuit design for high-efficiency and highly integrated power-factor correction (PFC) converters
(Applicant
Wicht, Bernhard
)
Transition metal-nitride-AlGaN layers for electronic applications by sputtering epitax
(Applicants
Dadgar, Armin
;
Feneberg, Martin
)
Spokesperson
Professorin Dr.-Ing. Sibylle Dieckerhoff
