Hot-Wire Chemical Vapor Deposition System

• Fachliche Zuordnung: Physik der kondensierten Materie
• Förderung: Förderung in 2015
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 282211330

The head of the group is a researcher of topological insulators (TIs) and topological superconductors (TSCs). Our group has been doing research at Osaka University, but is moving to the University of Cologne to focus more on the fundamental physics of TIs and TSCs. One of the objectives of our research is to discover novel quantum phenomena in TIs and TSCs, which requires fabrications of state-of-the-art devices based on these materials. The hot-wire chemical vapor deposition (HWCVD) system is a very useful tool for depositing high-quality SiNx dielectric layer at low temperature for top-gate fabrications on TIs without degrading the surface quality, and our group is already using this tool to fabricate various devices at Osaka. However, there is unfortunately no HWCVD system at the University of Cologne, and hence it is impossible for us to continue doing the research in this core area without buying a new HWCVD system.

• DFG-Verfahren: Forschungsgroßgeräte
• Großgeräte: Hot-Wire Chemical Vapor Deposition System
• Gerätegruppe: 0920 Atom- und Molekularstrahl-Apparaturen
• Antragstellende Institution: Universität zu Köln
• Leiter: Professor Dr. Yoichi Ando