GaN-basierte Transistoren mit Trigate-Architektur

• Antragsteller: Professor Dr. Oliver Ambacher; Privatdozent Dr.-Ing. Frank Schwierz
• Fachliche Zuordnung: Elektronische Halbleiter, Bauelemente und Schaltungen, Integrierte Systeme, Sensorik, Theoretische Elektrotechnik
• Förderung: Förderung von 2013 bis 2017
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 243486436

• Erstellungsjahr: 2017

Zusammenfassung der Projektergebnisse

From the project partners’ point of view, the project was very successful. The close interaction between theoretical and experimental efforts and, most of all, the excellent experimental work, all project objectives formulated in the proposal have been achieved. Moreover, world record performance of GaN tri-gate HEMTs has been demonstrated and the first integrated tri-gate circuits have been realized. Regarding the applications, the development of e-mode tri-gate HEMTs suggests a more reliable operation in power electronics applications such as fail-safe DC-DC converters, as much as it advocates simplified bias networks in all types of circuit topologies. Microwave and millimeter-wave power amplifier applications is another field of interest in which the proposed tri-gate concept becomes advantageous since the preservation of the RF performance at high-bias regimes allows for a nearly-ideal output power scaling, without the cost of a reduced cutoff frequency. Therefore, the beneficial properties of the tri-gate transistors demonstrated in this project promise much better scaling performance and prospective development beyond millimeterand submillimeter-wave frequencies.

Projektbezogene Publikationen (Auswahl)

• “Design of GaN tri-gate HEMTs,” Proc. Int. Conf. on Advanced Semiconductor Devices & Microsystems (ASDAM), pp. 1–4 (2014)
  M. Alsharef, R. Granzner, E. Ture, R. Quay, J. Racko, J. Breza, and F. Schwierz
  (Siehe online unter https://doi.org/10.1109/ASDAM.2014.6998657)
• “Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design,” Proc. European Microwave Integrated Circuits Conf. (EuMIC), pp. 97–100 (2015)
  E. Ture, P. Brückner, F. V. Raay, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, and O. Ambacher
  (Siehe online unter https://doi.org/10.1109/EuMIC.2015.7345077)
• “Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length,” Proc. European Microwave Integrated Circuits Conference (EuMIC), pp. 61–64 (2016)
  E. Ture, P. Brückner, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, and O. Ambacher
  (Siehe online unter https://doi.org/10.1109/EuMIC.2016.7777489)
• “High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers,” IEEE Journal of the Electron Devices Society, vol. 4, no. 1, pp. 1–6 (2016)
  E. Ture, P. Brückner, B.-J. Godejohann, R. Aidam, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, and O. Ambacher
  (Siehe online unter https://doi.org/10.1109/JEDS.2015.2503701)
• “Performance of tri-gate AlGaN/GaN HEMTs,” Proc. European Solid-State Device Research and Circuit Conf. (ESSDERC), pp. 176-179 (2016)
  M. Alsharef, R. Granzner, F. Schwierz, E. Ture, R. Quay, and O. Ambacher
  (Siehe online unter https://doi.org/10.1109/ESSDERC.2016.7599615)
• “RF performance of tri-gate GaN HEMTs,” IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4255–4261 (2016)
  M. Alsharef, M. Christiansen, R. Granzner, E. Ture, R. Quay, O. Ambacher, and F. Schwierz
  (Siehe online unter https://doi.org/10.1109/TED.2016.2606701)
• “First demonstration of W-Band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power,” International Microwave Symposium (IMS) 2017
  E. Ture, P. Brückner, R. Quay, M. Alsharef, R. Granzner, F. Schwierz, and O. Ambacher
  (Siehe online unter https://doi.org/10.1109/MWSYM.2017.8058452)