Single quantum dot resonant tunnelling diodes and their integration

• Antragsteller: Dr. Giovanni Costantini
• Fachliche Zuordnung: Theoretische Physik der kondensierten Materie
• Förderung: Förderung von 2006 bis 2010
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 21644817

The goal of this project is to embed and integrate single quantum dots (QDs) into resonant tunnelling diodes (RTDs). Such QD RTDs will be used to investigate the electronic structure of single and closely stacked QDs. These results will be compared to wave function mapping experiments carried out by low temperature scanning tunnelling spectroscopy. High peak to valley current ratios will be realized to integrate two single QD RTDs into a static random access (SRAM) memory cell on a single chip. In order to functionalise and integrate single QDs in RTDs, the lateral position of the QDs needs to be controlled. We therefore plan to carry out QD growth on pre-patterned substrates, which will be investigated in depth by insitu scanning tunnelling microscopy.

• DFG-Verfahren: Forschungsgruppen
• Teilprojekt zu: FOR 730: Positioning of single nanostructures - Single quantum devices -
• Beteiligte Person: Professor Dr. Klaus Kern