Investigating the influence of defects on charge carrier properties in resistive switching with near-field optical microscopy and spectroscopy (B05)

• Subject Area: Experimental Condensed Matter Physics
• Term: from 2011 to 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 167917811

Project B5 aims on the nanoscale imaging of conduction properties in electrical switching devices and materials of both types (PCM and VCM) in order to understand the fundamental defect-related mecha-nisms limiting their reliability and scalability. Specifically, we employ the imaging method of infrared scat-tering-type near-field optical microcopy (s-SNOM) to get quantitative information on the local charge car-rier density in the proximity of defects or switched areas at nanoscale resolution. Besides the in situ im-aging of filaments and dislocations in electrical switching devices, we will also address fundamental mate-rial and growth questions on chemically synthesized nanoparticles.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 917: Resistively Switching Chalcogenides for Future Electronics - Structure, Kinetics and Device Scalability: 'Nanoswitches'
• Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Head: Professor Dr. Thomas Taubner