Resistive switching of amorphous, non-stoichiometric oxide films (A06)

• Subject Area: Solid State and Surface Chemistry, Material Synthesis
• Term: from 2011 to 2019
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 167917811

This project aims at the in-depth understanding of bulk resistive switching in amorphous, non-stoichiometric oxide films. For this purpose, a combination of experimental and theoretical investigations will be per-formed to elucidate the various aspects of the bulk switching mechanism and to compare the switching kinetics with filamentary switching. In addition, we want to generalize our proof of principle results that we obtained within the first period for amorphous gallium oxide to the broad class of amorphous oxides.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 917: Resistively Switching Chalcogenides for Future Electronics - Structure, Kinetics and Device Scalability: 'Nanoswitches'
• Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Head: Professor Dr. Manfred Martin