Detailseite
Projekt
Epitaxial Graphene Transistor EPIGRAT
Antragsteller
Professor Dr. Detlef Hommel
Fachliche Zuordnung
Experimentelle Physik der kondensierten Materie
Förderung
Förderung von 2010 bis 2013
Projektkennung
Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 162736553
The overall goal of the project is to synthesize and characterize epitaxial graphene layers on silicon carbide suitable for future electronics, and to fabricate and characterize transistors made from these materials. The project includes partners with expertise in graphene synthesis, characterization, and processing of transistors. The added scientific values of the collaboration are: The possibility to compare different methods of synthesizing graphene (ITME and LiU). Among the partners, LiU, UW, CU, BrU, and CNRS-GHMFL possess expertise in material characterization. These different organizations have access to several different advanced characterization methods, which in total represent an impressive effort in characterizing different aspects of graphene. BiU and CTH will fabricate and characterize graphene-based transistors and other test-devices, which will facilitate the evaluation of graphene for electronic applications and support the graphene-characterization.In the project, there will be a constant flow of material, devices, and data from material and device fabrication, which would be very hard to organize in any other way.The project spans from the growth and characterization of layers to the creation of the devices themselves. This means that the project encompasses the entire end-to-end process for realizing electronic devices. There will be a flow of material, devices, and measurement results in the project which will promote the development of graphene material and graphene-based electronic devices. This total effort is hard to achieve within one or even two countries.
DFG-Verfahren
Sachbeihilfen
Internationaler Bezug
Polen, Schweden, Tschechische Republik, Türkei
