Mikromagnetismus und Transportverhalten von (Ga,Mn)As Nanostrukturen
Final Report Abstract
The work done in this project has proposed and laid the ground work for a fully programmable, electrically controlled hybrid logic-memory device based on (Ga,Mn)As, and all aspects of such a device have now been demonstrated to work. The project has also allowed us to enhance our understanding of the nature of (Ga,Mn)As, especially with regards to its homogeneity and how the local and global nature of electrical and magnetic properties scale differently with device size. It is also worth mentioning that the project has significantly moved forward the field of lithographic structuring of (Ga,Mn)As, a fact which was highlighted by when a figure of the logic device paper was chosen to appear on the cover of the Phys. Rev. Lett. issue in which the work was published.
Publications
- “Fully Electrical Read-Write Device Out of a Ferromagnetic Semiconductor”. PRL 106, 057204, (2011)
S. Mark at al.
(See online at https://doi.org/10.1103/PhysRevLett.106.057204) - “Induced magnetic anisotropy in lifted (Ga,Mn)As thin films”. APL 98, 231903 (2011)
F. Greullet et al.
(See online at https://doi.org/10.1063/1.3597301) - “Local domain sensing with nanostructured tunneling anisotropic magnetoresistance probes”. APL 99, 202504 (2011)
S. Mark. et al.
(See online at https://doi.org/10.1063/1.3662444)
