FOR 476: Silicon Carbide as Semiconductor Material: Alternative Approaches towards Crystal Growth and Doping

Subject Area Physics
Computer Science, Systems and Electrical Engineering

Term from 2002 to 2008

Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 5469528

Project Description

No abstract available

DFG Programme Research Units

Projects

Alternative ways in the SiC-sublimation growth and co-doping with donors (Applicant Pensl, Gerhard )
Characterisation of structural defects in SiC by x-ray diffraction (Applicant Magerl, Andreas )
Characterization of SiC-crystal growth by micro-Raman spectroscopy (Applicant Hundhausen, Martin )
Crystal growth of SiC using a modified PVT setup (Applicant Wellmann, Peter )
Defect and interfacial characterization of SiC wafers, structures and devices based on electron microscope techniques (Applicant Christiansen, Silke )
Doping and aggregation of vacancies / Graphite inclusions and overlayers (Applicant Pankratov, Oleg )
Herstellung von polytypreinen defektarmen SiC-Volumenkristallen aus der flüssigen Phase (Applicant Hofmann, Dieter )
In-situ x-ray measurements of defect generation and crystalline quality during PVT growth, cool down and post-growth annealing of SiC (Applicant Hock, Rainer )
Silicon carbide (SiC) as semiconductor material: Alternative approaches towards crystal growth and doping (Applicant Ley, Lothar )
Untersuchung von p-dotierten Schichten zur Bauelementeisolation (Applicant Frey, Lothar )

Spokesperson Professor Dr. Lothar Ley