Detailseite
Projekt
In-situ x-ray measurements of defect generation and crystalline quality during PVT growth, cool down and post-growth annealing of SiC
Antragsteller
Professor Dr. Rainer Hock
Fachliche Zuordnung
Physik der kondensierten Materie
Förderung
Förderung von 2005 bis 2011
Projektkennung
Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5469528
The search for growth routes to reduce the defects in PVT grown SiC remains a crucial topic for lange scale production of wafer material with appropriate electronic properties. Because of the extreme conditions needed to grow SiC by the modified Lely technique at temperatures above 2000 °C, crystal growers are essentially "blind" to the evolution of the structural quality during the growth process itself. The same holds true for the cool-down of the crystals, a process step which by its own may have an important influence on the final structural quality of the grown crystals. We propose to monitor the defect generation and development of the crystalline quality from the seed to the final crystal and during cool down to ambient temperature by high-energy x-ray diffraction in-situ. The x-ray experiments will include a study of the influence of post-growth ingot annealing on the structural quality. The main goal of this project is the identification of process parameter regimes such as temperature and material flux where defects in SiC crystals are formed.
DFG-Verfahren
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