Growth and characterization of short-wavelength surface emitting lasers based on GaN

The aim of the project is the fabrication and investigation of nitride-based vertical cavity surface-emitting lasers in the blue-UV spectral range containing in its final stage quantum dots as the active region. Within the scope of the project the epitaxial growth process of the VCSEL structures has to be developed. This includes in particular the growth of doped high-reflectivity distributed Bragg reflectors and resonators with high quality factors using metal-organic vapour phase epitaxy and molecular beam epitaxy. These structures will then be analyzed with regard to their linear optical properties (reflection, photoluminescence, Micro-PL and Micro-PL excitation spectroscopy on single QDs) and lasing properties optical gain, temperature dependence of threshold, transversal mode structure, lasing dynamics).

DFG-Verfahren Forschungsgruppen

Teilprojekt zu FOR 506:  Physics of nitride-based, nanostructured, light-emitting devices

Beteiligte Person Professor Dr. Jürgen Gutowski