Ultradoped GeSn-based plasmonic antennas and GeSn/Si plasmon-enhanced heterojunction photoemission infrared photodetectors on the Si platform

• Applicants: Yonder Berencén, Ph.D.; Professorin Dr. Inga Fischer
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 528206533

The project aim is to investigate strategies for obtaining highly n-doped GeSn-alloys and successfully demonstrate their potential for two applications in antenna structures for light amplification and hot-electron photodetection, which can be realized on the cost-effective Si platform for possible applications in THz optoelectronics and IR CMOS image sensors, respectively. Our proposal focuses on GeSn material research as a first step in order to leverage the potential of heavily doped Ge1-xSnx alloys by in-situ molecular beam epitaxy and ex-situ implantation techniques, which are followed by post-growth thermal treatment. Secondly, our plan is to investigate the use of resonances in antenna structures made from highly n-doped GeSn alloys for signal amplification in spectroscopic applications at mid-IR wavelengths. Finally, our plan is to investigate antenna structures obtained from the highly doped GeSn layers for applications in photoemissive hot-electron photodetection. This approach can potentially enable fully CMOS-compatible infrared sensing of IR light.

• DFG Programme: Research Grants
• International Connection: Taiwan
• Partner Organisation: National Science and Technology Council (NSTC)
• Cooperation Partner: Professor Dr. Ing-Song Yu