Ultradoped GeSn-based plasmonic antennas and GeSn/Si plasmon-enhanced heterojunction photoemission infrared photodetectors on the Si platform
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term
since 2023
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 528206533
The project aim is to investigate strategies for obtaining highly n-doped GeSn-alloys and successfully demonstrate their potential for two applications in antenna structures for light amplification and hot-electron photodetection, which can be realized on the cost-effective Si platform for possible applications in THz optoelectronics and IR CMOS image sensors, respectively. Our proposal focuses on GeSn material research as a first step in order to leverage the potential of heavily doped Ge1-xSnx alloys by in-situ molecular beam epitaxy and ex-situ implantation techniques, which are followed by post-growth thermal treatment. Secondly, our plan is to investigate the use of resonances in antenna structures made from highly n-doped GeSn alloys for signal amplification in spectroscopic applications at mid-IR wavelengths. Finally, our plan is to investigate antenna structures obtained from the highly doped GeSn layers for applications in photoemissive hot-electron photodetection. This approach can potentially enable fully CMOS-compatible infrared sensing of IR light.
DFG Programme
Research Grants
International Connection
Taiwan
