Secondary ion mass spectrometer

• Subject Area: Condensed Matter Physics
• Term: Funded in 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 527629941

For highly spatially and depth-resolved atomic composition analysis of solids and particularly for determination of dopant profiles in semiconductors a replacement for a more than 30 year old secondary ion mass spectrometer (SIMS) shall be purchased for the Institute of Physics at the Faculty of Natural Sciences at the Otto-von-Geuricke University Magdeburg. The spectrometer will be oprated by the department of Semiconductor Epitaxy which is intensily occupied with the fabrication, investigation and application of ultra-pure, single crystalline epitaxial layers out of the group of III-V compound semiconductors. Current topics of that research are local growth of semiconductor structures by laser-assisted metalorganic vapor phase epitaxy, vertical power electronics based on group-III nitrides and sputter epitaxy of transition metal nitrides. Besides a typical depth resolution of about 1nm a higher lateral resolution is also targeted, in particular for a better understanding of the local growth and of device properties. In addition, detection of surface contaminations is helpful which are typically problematic during fabrication of layer structures by epitaxy methods and of optoelectronic and electronic devices. Cooperating groups of the Institute of Physics (Material physics, Solid state physics) and of the Institute for Materials Engineering and Joining Technology (Metallic materials) particpate in the use of the instrument.

• DFG Programme: Major Research Instrumentation
• Major Instrumentation: Sekundärionenmassenspektrometer
• Instrumentation Group: 1720 Spezielle Massenspektrometer (Flugzeit-, Cyclotronresonanz-, Ionensonden, SIMS, außer 306)
• Applicant Institution: Otto-von-Guericke-Universität Magdeburg
• Leader: Professor Dr. André Strittmatter