In-situ studies of plastic relaxation in InGaN buffers serving as substrates for overcoming current incorporation barriers in high In content nitride epitaxial layers

Light emitting diodes (LED) based on the InGaN material system are found in wide areas of our daily life, e.g. display illumination, automotive lighting or general lighting. Central to such a LED is the region where an electrical current is converted to light emission, occurring in a very thin (2-3 nm) thick InxGa1-xN film, denoted as quantum well. In theory, the emission wavelength of this quantum well should be easily tunable by varying the composition x between 0

DFG Programme Research Grants

International Connection Poland

Partner Organisation Narodowe Centrum Nauki (NCN)

Co-Investigator Dr. Martin Albrecht

Cooperation Partner Dr. Julita Smalc Koziorowska