Vertical Transparent Conductive Oxide Transistors on Flexible Substrates

• Applicant: Professor Dr. Karl Leo
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2019 to 2021
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 415044933

The goal of the project is to realize novel oxide-based vertical transistors on flexible substrates. The devices will employ the permeable-base transistor (PBT) concept which we have successfully used for organic transistors. A main goal is to develop suitable techniques for the permeable base electrode, where different approaches to form a barrier and different deposition techniques for the base electrode will be tested. We plan to derive scaling laws in order to fabricate devices allowing for ultra-high-frequency (UHF, > 1GHz) applications. To achieve a detailed understanding of device working principles, charge carrier transport will be studied in vertical Schottky-type diodes and compared to drift-diffusion simulations. Based on the device scaling laws, we will optimize the PBT layout and the device itself regarding cut-off frequency. UHF characterization will be done for single PBT devices and an oscillator circuit including at least two integrated transistor devices.

• DFG Programme: Research Grants
• Co-Investigator: Dr. Hans Kleemann