Metal oxynitrides have been proposed as an alternative material system in the field of thin film transistors. The most common materials addressing these applications, besides amorphous Si, are multi-cation compounds exhibiting low mobilities (in the order of 1-10 cm2 V-1 s-1) and are often amorphous. On the opposite side in terms of mobility and crystalline quality, ZnO-based high-electron mobility transistors have enabled the first observation of the fractional quantum Hall effect in a material other than Si, III-V materials or graphene. In this project we aim to bridge the gap between these two universes by analyzing two multianion families, namely oxynitrides: ZnNO and MgNO. In ZONE we propose to grow (Zn,Mg)(N,O) thin films by magnetron sputtering and molecular beam epitaxy, to study their physical properties (poorly known or even unknown) and to fabricate basic electronic devices, in particular HEMTs, metal-semiconductor and junction field effect transistors (MESFETs and JFETs).
DFG Programme
Research Grants
International Connection
France
Major Instrumentation
Nitrogen plasma source
Instrumentation Group
8380 Schichtdickenmeßgeräte, Verdampfungs- und Steuergeräte (für Vakuumbedampfung, außer 833)
