Complementary-GaN for high-temperature electronics (C-GaN)

• Applicants: Dr.-Ing. Mohammed Alomari; Professor Dr. Renato Negra; Professor Dr.-Ing. Andrei Vescan
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2017 to 2020
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 322067837

In todays electronics, the core of any sensing, control, data processing or transmission system is provided by semiconductor devices and circuits. However, mainstream electronics are rarely designed to work beyond 125°C (typical automotive requirement) and only few systems exist which can operate up to 250°C. There is a vast range of applications, such as gas turbines, deep-well drilling rigs, jet or combustion engines in which temperatures easily reach values about 1000°C. The monitoring and controlling of such processes is of utmost importance for effective, environmentally friendly and safe operation. Under such conditions, this task can currently only be fulfilled by remote systems. Due to this remoteness, accuracy and speed are limited, which in turn requires that the specific processes are run under very conservative safe conditions, even if that may not be the most efficient or clean ones. To truly address the term hightemperature electronics, hence, to enable the effective operation up to 1000°C, the project will investigate the development of the basic electronic components required for such extreme conditions. It aims to greatly expand the state of the incumbent technology and extend the areas for which electronic systems can be applied. The starting point is the selection of a material suitable for the realization of hightemperature electronics. Gallium nitride, a compound semiconductor which has superior material properties compared to the commonly used silicon, is the best solution with respect to performance and temperature stability. This material is already well known to enable blue and white light emitting diodes and it is also being used for the fabrication of electronic devices for efficient mobile communication base stations. To reach the ambitious goal of the project, fundamental scientific questions as well as practical challenges have to be overcome. For example: How do the used semiconductors, dielectrics, ceramics and metals interact at such high operating temperatures how does this affect the device and circuit functionality? How can testing of the fabricated components be performed such that realistic operating conditions are simulated? To address these topics, the applicants will combine their respective expertise in all relevant areas along the development chain. The synthesis of the material itself will be covered as well as the fabrication of electronic components and finally, the evaluation under realistic operating conditions will be performed. Electrical measurements as well as physical analysis will be performed to gain an understanding of the processes which limit the performance, lifetime and reliability of the fabricated devices. Finally, a circuit will be demonstrated which will operate up to 800-1000°C.

• DFG Programme: Research Grants