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DFG-RSF: Polytype and isotope engineering of silicon carbide for quantum microwave amplifiers

Subject Area Experimental Condensed Matter Physics
Term from 2016 to 2021
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 310370333
 
Final Report Year 2021

Final Report Abstract

Here, we have developed the fundamentals and the layout of a future maser device and finally demonstrated the microwave generation in optical pumping of silicon defects in SiC for the first time. This was based on a systematic evaluation of the influences of numerous factors on the inversion population within the high-spin system, in particular careful defect engineering, investigation of the spin-relaxation properties and a systematic development of the microwave resonator as well as the design of the microwave channel. Our research has led to 6 publications in high impact peer-reviewed journals, most of them in cooperation with Russian colleagues. Thus, the joint DFG-RSF project strengthened the bilateral cooperation, which is ongoing at a very high level, even though the exchange of staff is only possible virtually.

Publications

  • Optical thermometry based on level anticrossing in silicon carbide, Sci. Rep. 6, 33301 (2016)
    A. Anisimov, D. Simin, V. Soltamov, S. Lebedev, P. Baranov, G. V. Astakhov, V. Dyakonov
    (See online at https://doi.org/10.1038/srep33301)
  • 3D Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide, Nano Letters 17, 2865-2870 (2017)
    H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
    (See online at https://doi.org/10.1021/acs.nanolett.6b05395)
  • Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission, Phys. Rev. Applied 9, 054006 (2018)
    M. Fischer, A. Sperlich, H. Kraus, T. Ohshima, G. V. Astakhov, and V. Dyakonov
    (See online at https://doi.org/10.1103/PhysRevApplied.9.054006)
  • Spin and Optical Properties of Silicon Vacancies in Silicon Carbide – A Review, Phys. Status Solidi B 255, 1700258 (2018)
    S. A. Tarasenko, A. V. Poshakinskiy, D. Simin, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, and G. V. Astakhov
    (See online at https://doi.org/10.1002/pssb.201700258)
  • Spin colour centres in SiC as a material platform for sensing and information processing at ambient conditions, EPJ Web of Conferences 190, 04001 (2018)
    A. Anisimov, V. Soltamov, P. Baranov, G. Astakhov, and V. Dyakonov
    (See online at https://doi.org/10.1051/epjconf/201819004001)
  • Excitation and coherent control of spin qudit modes in silicon carbide at room temperature, Nat. Commun. 10, 1678 (2019)
    V.A. Soltamov, C. Kasper, A.V. Poshakinskiy, A.N. Anisimov, E.N. Mokhov, A. Sperlich, S.A. Tarasenko, P.G. Baranov, G.V. Astakhov and V. Dyakonov
    (See online at https://doi.org/10.1038/s41467-019-09429-x)
  • Influence of Irradiation on Defect Spin Coherence in Silicon Carbide, Phys. Rev. Appl. 13, 044054 (2020)
    C. Kasper, D. Klenkert, Z. Shang, D. Simin, A. Gottscholl, A. Sperlich, H. Kraus, C. Schneider, S. Zhou, M. Trupke, W. Kada, T. Ohshima, V. Dyakonov, G. V. Astakhov
    (See online at https://doi.org/10.1103/PhysRevApplied.13.044054)
 
 

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