Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes

• Applicants: Dr.-Ing. Bodo Kalkofen; Privatdozent Dr. Peter Pichler, since 8/2018
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2017 to 2019
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 284353884

Atomic layer deposition processes for phosphorus-containing layers will be developed and investigated. Recently developed ALD processes for boron oxide and antimony oxide will be further improved and analyzed as well. These layers will be used as a dopant sources for silicon doping to produce ultra-shallow and homogeneous doped pn junctions, especially for applications, where doping on three-dimensional surface configurations is required. In addition, suitable methods for stabilization of unstable dopant layers need to be found and analyzed. The deposited layers will be characterized and the diffusion processes in the silicon and in the oxide phase will be studied, and thus the doping processes will be modeled.

• DFG Programme: Research Grants
• Ehemaliger Antragsteller: Professor Dr. Lothar Frey, until 8/2018 (†)