In situ transmission electron microscopy of resistive switching devices (B09)

In Project B9, the focus will be on in situ TEM characterization of novel PCM and VCM materials during switching processes. Changes in atomic structure and local electric field distributions will be tracked with sub-nm spatial resolution using both pixelated STEM techniques and off-axis electron holography. For PCMs, the primary focus will be on studies of spatially confined devices, for which the small device sizes and short retention times complicate imaging. For VCMs, the primary focus will be on studies of defects, which require sub-atomic-resolution structural and chemical analysis.

DFG Programme Collaborative Research Centres

Subproject of SFB 917:  Resistively Switching Chalcogenides for Future Electronics - Structure, Kinetics and Device Scalability: 'Nanoswitches'

Applicant Institution Rheinisch-Westfälische Technische Hochschule Aachen

Project Head Professor Dr. Rafal E. Dunin-Borkowski