The projects aims at elucidating the microstructure of thin films of Cu(In,Ga)Se2 and has the goal of deriving a microstructural model for typical layers of this semiconductor. The microstructural model describes the local optoelectronic properties of this compound semiconductor which is characterised by a high degree of disorder. This microstructural model will be verified by simulating spatial-time-spectral resolved luminescence experiments as well as experiments on the charge carrier transport which will be performed within the project. The simulation will employ the method of finite elements in 3-dimensions. By combining experiment and simulation the influence of disorder on the carrier transport shall be clearified. As disorder will be considered in generalised terms, the results of this project can be transferred to other material systems.
DFG Programme
Research Grants
