Diodes based on MBE and MOVPE oxide thin films

• Applicant: Professor Dr. Marius Grundmann
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2014 to 2018
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 266999219

Bipolar diodes will be fabricated on the basis of (n-type) CdO and various p-type electrodes, in particular NiO and GaN:Mg. The CdO epitaxy with oxide MBE at CNRS-CRHEA shall be accomplished on insulating and p-type templates. The diode characteristics and the novel hysteresis effect shall be modeled on the basis of a type-III heterostructure band lineup.

• DFG Programme: Research Grants