The HeuMem team exploits the exceptionally versatile magnetic Heusler compounds and matching tunnel barriers to lay the ground for extremely small, fast and power saving devices that could enable visionary IT-concepts such as normally-off/instant-on computing, magnetic logic and more generally ultra-low power green electronics. Theory and experiment target at a unique set of properties to enhance the functionality of magnetic tunnel junctions. These building blocks of spintronics need material systems combining low magnetic saturation and damping with high perpendicular anisotropy and spin polarization to enable easy Spin-Transfer-Torque switching, high data stability, large readout signal and fast read/write cycles. HeuMem addresses key bottlenecks of future memories and logic such as non-volatility, scalability, and fJ energy consumption. It will impact both basic science by advancing the engineering of such complex material systems, as well as concepts for future electronics.
DFG Programme
Research Grants
International Connection
France
