Detailseite
Projekt
Growth of hetero and quantum structures on the basis of semiconductor nanowires by molecular beam epitaxy
Antragsteller
Dr. Peter Werner
Fachliche Zuordnung
Experimentelle Physik der kondensierten Materie
Förderung
Förderung von 2006 bis 2009
Projektkennung
Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 25986487
Semiconductor nanowires (NW) with diameters below 50 nm are expected to show extraordinary electrical, mechanical and optical properties. Although different concepts of their application are already in a first test state (sensors, transistors), there is still a need to develop/improve specific techniques of NW synthesis. This includes NW based heterostructures/multilayers and quantum structures, which would be especially attractive for many basic investigations as well as for applications.The current project is directed, first, to the growth of silicon NW by molecular beam epitaxy (MBE). This specific technique allows the study of growth processes in the nanometer-range under well-defined conditions (ultra-high vacuum, contamination free surfaces, in-situ deposition of all substances). As the formation process, we will apply the vapor-liquid-solid technique (VLS), in which the NW formation is initiated by small Au droplets. As a second step of the project, we will combine the Si NW with small Ge structures, which will be incorporated along the axis of to the NW (quantum wells and dots) as well as a radial core-shell structure (quantum wells). The electrical and optical properties of such nanostructures/quantum structures will be analyzed in cooperation with competent partners.
DFG-Verfahren
Schwerpunktprogramme
