Pore evolution in metal assisted chemically etched (MACE) porous Si

• Applicant: Professorin Dr. Margit Zacharias
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2014 to 2020
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 256552060

The MACE process has been investigated up to now mostly based on 2D scanning electron and transmission electron micrographs making some of the conclusions highly speculative. The conclusions derived from such planar electron microscopy may not reflect the actual phenomena as the movement of the metal catalyst in bulk Si is highly complex. Hence, 3D imaging is mandatory to visualize the etched pores and to understand the underlying dynamics. The project will concentrate on the investigation of the etching behavior of metal assisted chemical etching (MACE) of Silicon using the novel Atomic Layer Deposition-Fill-Etch-Imaging (AFEI) technique invented in our labs. Thus, the overall aim of the project is to put the current hypotheses involving MACE to test as we have already seen deviations in first 3D imaging experiments. This will lead to a deeper understanding of the underlying dynamics of the etching process, catalyst migration, and pore evolution, which will enable control and design of future applications. Finally we will develop physical-chemical models as well as computer simulations for the deeper understanding of the MACE process and prediction of catalyst movement.

• DFG Programme: Research Grants