Project Details
Projekt
Microscopic understanding of graphene based field effect transistors - towards high performance devices
Subject Area
Experimental Condensed Matter Physics
Term
from 2013 to 2018
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 242788437
The high carrier mobility in graphene and its two 2D nature have triggered huge expectations towards a application as channel material in high-frequency field effect transistors for next generation electronics. Although these expectations have been already fulfilled partially in terms of delivering high ft values, major parameter, which are even more relevant for real application like fmax or the intrinsic voltage gain, still lack far behind established technologies. In this proposal we will address these shortcomings by developing a detailed microscopic understanding of the imitating effects in a joint and interdisciplinary approach of electrical engineering and nano-analytics. Using Kelvin Probe Microscopy we will investigate the microscopic details of drain current saturation and the contact resistance in graphene based field effect transistors. Based on this knowledge these devices will be optimized towards achieving high fmax and also intrinsic voltage gain in order to bring graphene transistors closer to the needs of real applications. Therefore this project marks an important step towards the realization of integrated high-frequency circuits based on graphene.
DFG Programme
Priority Programmes
Subproject of
SPP 1459:
Graphen
