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Projekt Druckansicht

Depleted Monolithic Active Pixels (DMAPS) : A novel approach

Fachliche Zuordnung Kern- und Elementarteilchenphysik, Quantenmechanik, Relativitätstheorie, Felder
Förderung Förderung von 2013 bis 2018
Projektkennung Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 237333540
 
Erstellungsjahr 2017

Zusammenfassung der Projektergebnisse

In conclusion we can state that the goals of the DFG project has been fully achieved. Even more so, the development of a large, functional, fully monolithic CMOS Pixel Chip was originally not within the proposed reach of the proposal. With the systematic investigation of different newly available technology features of different vendors and subsequent selection of the appropriate approach for a large CMOS matrix we could advance this interesting and promising new pixel detector development into a stage of serious consideration for the LHC experiments' upgrade. Not at the least due to our developments CMOS Pixels are going to be included in the ATLAS Technical Design Report as an option for the ATLAS Upgrade Detector. From this point on - beyond the exploration phase - further developments are within BMBF funding. We consider a follow up proposal addressing aspects of generic monolithic and compact CMOS pixel modules, suitable in particular for X-ray imaging and similar applications.

Projektbezogene Publikationen (Auswahl)

  • DMAPS: a fully depleted monolithic active pixel sensor-analog performance characterization. JINST 10 (2015) 02, P02013
    M. Havranek, T. Hemperek, H. Krüger, Y. Fu, L. Germic, T. Kishishita, T. Obermann, N. Wermes
  • A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process. Nucl. Instrum. Meth. A796 (2015) 8-12
    Tomasz Hemperek, Tetsuichi Kishishita, Hans Krüger, Norbert Wermes
    (Siehe online unter https://doi.org/10.1016/j.nima.2015.02.052)
  • From Hybrid to CMOS Pixels ... a possibility for LHC's pixel future? iWoRiD Honorary Talk, Proceedings of iWORiD-Conference 2015 JINST (2015) 10 C12023
    N. Wermes
    (Siehe online unter https://doi.org/10.1088/1748-0221/10/12/C12023)
  • Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology, Nucl. Instrum. Meth. A824 (2016) 417-418
    T. Kishishita, T. Hemperek, P. Rymaszewski, T. Hirono, H. Krüger, N. Wermes
    (Siehe online unter https://doi.org/10.1016/j.nima.2015.09.048)
  • Neutron irradiation test of depleted CMOS pixel detector prototypes, JINST 12 (2017) P02021
    I. Mandic, ..., T. Hemperek, M. Daas, F. Hügging H. Krüger, D.-L. Pohl, N. Wermes
    (Siehe online unter https://doi.org/10.1088/1748-0221/12/02/P02021)
  • Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line. JINST 12 (2017) no.06, P06020
    D. -L. Pohl, T. Hemperek, F. Hügging, J. Janssen, H. Krüger, A. Macchiolo, N. Owtscharenko, I. Caicedo Sierra, L. Vigani, N. Wermes
    (Siehe online unter https://doi.org/10.1088/1748-0221/12/06/P06020)
 
 

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