Project Details
Projekt
Quantum-mechanical device concepts including ultra-thin functional ALD-films for terahertz applications
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Physical Chemistry of Solids and Surfaces, Material Characterisation
Physical Chemistry of Solids and Surfaces, Material Characterisation
Term
from 2013 to 2019
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 226970965
The terahertz frequency range currently constitutes one of the central strategic research fields for numerous technical applications. In contrast to previous approaches, the here-proposed concept study favors a frequency generation based on quantum-mechanical devices. The main aim of thisproject is to obtain a fundamental understanding of the relevant factors in the production of such quantum-mechanical devices. As the films included therein span only a few atomic layers, the functional material properties of the individual layers and the behavior of interfaces between adjacentlayers will be considered in addition to the characteristics of a device demonstrator in its entirety. So, this project does not focus on the mere production of a complete transistor and its electrical evaluation. Instead, this research service will concentrate on three basic aspects that are crucial forthe functionality of quantum-mechanical devices in terahertz applications: First, the initial growth of ultra-thin functional layers will be investigated at exactly the place (in situ) and in real-time of the atomic layer deposition (ALD) processes. For this purpose, a vacuum cluster tool combines variousdirect and indirect surface analysis methods (photoelectron spectroscopy, scanning probe microscopy, ellipsometry, mass spectrometry) in a worldwide unique manner and thus provides an extraordinarily detailed insight into the ALD growth actions down to the sub-atomic level. Second, ultrathin graphite layers will be synthesized and their vertical transparency with respect to hot electrons will be characterized using a diode-like device which represents the core of a tunneling hot electron transistor. Third, the interaction of ultra-thin ALD films with the ultrathin graphite layer will be studied on the basis of a device-based process route implemented for the first time.
DFG Programme
Research Grants
Co-Investigators
Dr.-Ing. Matthias Albert; Grzegorz Lupina, Ph.D.
