Nitride-based deep UV laser diodes (C09)

• Subject Area: Experimental Condensed Matter Physics
• Term: from 2012 to 2019
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 43659573

The goal of project C9 is to realize AlGaN MQW current-injection laser diodes emitting in the ultraviolet spectral region below 280 nm. We will focus on several key challenges including efficient carrier injection, low absorption loss waveguides, and strong lateral optical und current confinement. In the 3rd phase of the CRC the following novel approaches will be investigated: (1) buried heterostructure laser diodes with AlN or InAlN current apertures and lateral optical confinement layers, (2) tunnel junctions for efficient hole injection into AlGaN MQW active regions, (3) the development of 2D lateral hole injection layers in combination with a low loss dielectric upper cladding layer as well as (4) growth and fabrication of low defect density AlGaN MQW laser structures with focus on optimizing the optical gain profile and transverse mode confinement.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 787: Semiconductor Nanophotonics: Materials, Models, Devices
• Major Instrumentation: Array detector for X--ray diffractometer
• Instrumentation Group: 4050 Meßelektronik und Zubehör für Röntgengeräte
• Applicant Institution: Technische Universität Berlin
• Co-Applicant Institution: Ferdinand-Braun-Institut gGmbH; Leibniz-Institut für Höchstfrequenztechnik (FBH)
• Project Heads: Professor Dr. Michael Kneissl; Professor Dr. Günter Tränkle; Dr. Tim Wernicke, since 1/2016