Correlation between the atomic structure and electronic states in resistively switching oxides (A02)

• Subject Area: Experimental Condensed Matter Physics
• Term: from 2011 to 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 167917811

Project A2 aims for the elucidation and quantification of spatial changes in the electronic and atomic structure taking place during repeated VC switching in order to determine the microscopic switching and failure mechanisms in dedicated binary and ternary oxide cells. Based on this knowledge, we will develop strategies to improve the reliability of VCM cells by rational materials design and the use of tailored pro-cessing conditions. By engineering cells with different switching modes identified in the second SFB peri-od (8W, C8W, filamentary, area-dependent), we are aiming to overcome the limiting trade-offs of current filamentary memory cells.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 917: Resistively Switching Chalcogenides for Future Electronics - Structure, Kinetics and Device Scalability: 'Nanoswitches'
• Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Heads: Professorin Dr. Regina Dittmann; Professor Dr.-Ing. Rainer Waser