Science of polar homo- and heterointerfaces

• Applicants: Dr. Martin Albrecht; Professor Dr. Axel Hoffmann
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering ; Experimental Condensed Matter Physics
• Term: from 2012 to 2016
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 198775133

• Final Report Year: 2021

No abstract available

Publications

• Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN, J. Appl. Phys. 110, (2011) 093503
  R. Kirste, R. Collazo, G. Callsen, M.R. Wagner, T. Kure, J. S. Reparez, S. Mita, J. Xie, A. Rice, J. Tweedie, Z. Sitar, A. Hoffmann
  
• The optical signature of Mg doped GaN: Transfer processes, Phys. Rev. B 86 (2012), 075207
  C. Callsen, M.R. Wagner, T. Kure, J.S. Reparaz, M. Bügler, J. Brunnenmeier, C. Nenstiel, A. Hoffmann, M. Hoffmann, J. Tweedie, Z. Bryan, S. Aygun, R. Kirste, R. Collazo, Z. Sitar
  
• Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements, J. Appl. Phys. 113 (2013), 203504
  R. Kirste, M.P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, Ch. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, Z. Sitar
  
• Ge doped GaN with controllable high carrier concentration for plasmonic applications, Appl. Phys. Lett. 103 (2013), 242107
  R. Kirste, M.P. Hoffmann, E. Sachet, M. Bobea, Z. Bryan, I. Bryan, C. Nenstiel, A. Hoffmann, J.P. Maria, R. Collazo, Z. Sitar
  
• Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressuredependent Raman measurements, Phys. Rev. B 90 (2014), 205206
  G. Callsen, M. R. Wagner, J. S. Reparaz, F. Nippert, T. Kure, S. Kalinowski, and A. Hoffmann, M. J. Ford and M. R. Phillips, R. F. Dalmau and R. Schlesser, R. Collazo and Z. Sitar
  
• Properties of AlN based lateral polarity structures, phys. stat. sol. (c) 11 (2014), 261
  R. Kirste, S. Mita, M.P. Hoffmann, L. Hussey, W. Guo, I. Bryan, Z. Bryan, J. Tweedie, M. Gerhold, A. Hoffmann, R. Collazo, Z. Sitar
  
• A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN, J. Appl. Phys. 117 (2015), 245702
  B.B. Haidet, I. Bryan, P. Reddy, Z. Bryan, R. Collazo, Z Sitar
  
• Charge neutrality levels, barrier heights, and band offsets at polar AlGaN. Appl. Phys. Lett. 107 (2015), 091603
  P. Reddy, I. Isaac, Z. Bryan, J.Tweedie, S. Washiyama, R. Kirste, S. Mita, R. Collazo, Ramon Z. Sitar
  
• Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy, Applied Physics Express. 8 (2015), 061003
  T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Yamamoto, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, Z. Sitar
  
• Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition, J. Appl. Phys. 120 (2016), 105701
  F. Kaess, S. Mita, J. Xie, P. Reddy, A. Klump, L. H. Hernandez-Balderrama, S. Washiyama, A. Franke, R. Kirste, A. Hoffmann, R. Collazo, Z. Sitar
  
• Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications, Appl. Phys. Lett. 108 (2016), 261106
  D. Alden, W. Guo, R. Kirste, F. Kaess, I. Bryan, T. Troha, A. Bagal, P. Reddy, L. H. Hernandez-Balderrama, A. Franke, S. Mita, C.-H. Chang, A. Hoffmann, M. Zgonik, R. Collazo, Z. Sitar 

  
• High temperature and low pressure chemical vapor deposition of silicom nitride on AlGaN : Band offsets and passivation studies, J. Appl. Phys. 119 (2016), 145702
  P. Reddy, S. Washiyama, F. Kaess, B. M. Hayden L. H. Hernandez- Balderrama, B.B.Haidet, D. Alden, A. Franke B. Sarkar, E. Kohn, R. Collazo, Z. Sitar
  
• On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates, CS Trans. 72 (2016 ), 31
  D. Alden, Z. Bryan, B. Gaddy, I. Bryan, G. Callsen, A. Koukitu, Y. Kumagai, A. Hoffmann, D. Irving, Z. Sitar, R. Collazo
  
• Polarity control in group-III nitrides beyond pragmatism, Phys. Rev. Appl. 5 (2016), 054004
  S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, M. Albrecht
  
• Surface kinetics in AlN growth: A universal model for the control of surface morphology in III- nitrides, Journal of Crystal Growth 438 (2016), 81
  I. Brian, Z. Bryan, S. Mita, A. Rice, J. Tweedie, R. Collazo, Z. Sitar
  
• UV second harmonic generation in AlN waveguides with modal phase matching, Opt. Mater. Express. 6 (2016), 2014
  T. Troha, M. Rigler, D. Alden, I. Bryan, W. Guo and R. Kirste and S. Mita and M. D. Gerhold and R. Collazo, Z. Sitar, M. Zgonik
  
• Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers, J. Appl. Phys. 122, 155303 (2017)
  N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht
  
• Intentional polarity conversion of AlN epitaxial layers by oxygen, Scientific Reports 8, 14111 (2018)
  N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès and M. Albrecht
  
• Point-defect nature of the ultraviolet absorption band in AlN, Phys. Rev. Appl. 9 (2018), 054036
  D. Alden, J.S. Harris, Z. Bryan, J.N. Baker, P. Reddy, S. Mita, G. Callsen, A. Hoffmann, D.L. Irving, R. Collazo, Z. Sitar
  
• Quasi-phase-matched second harmonic generation of UV light using AlN waveguides, Appl. Phys. Lett. 114 (2019), 103504
  D. Alden, T. Troha, R. Kirste, S. Mita, Q. Guo, A. Hoffmann, M. ZgoniK, R. Collazo, Z. Sitar