MOS detection for nano resonators

• Applicant: Professor Dr.-Ing. John Thomas Horstmann
• Subject Area: Microsystems
• Term: from 2011 to 2016
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 195215523

The scientific investigations in SP 7- MOS detection for nano resonators ¿ are based on the problem of decreasing sensor signals in micro and nano electromechanical systems due to the further downsizing of the mechanical sensor elements. For the conditioning of the sensor signals a concurrent reduction of noise is obligatory. Parasitic influences of connecting lines, bond pads and other packaging issues, which are a big part of the overall noise, can be strongly reduced by a tight coupling between transducer element and electronics.Based on this assumption in this project the technological process steps as well as the device physics and the circuit technology will be investigated for the on chip integration of mechanical sensing elements and primary electronics in stress sensitive MOS transistors. Therefore an array of cantilevers, which are inducing mechanical stress inside the channel of transistors, will be realized. The mechanical signals will be measured by the stress dependent variation of the charge carrier mobility in the channel of the MOSFET and the hereby influenced transistor parameters. The goal of the project is to prove the coupling of the mechanical with the electrical domain with small parasitic influences. The primary electronics includes signal amplifying for a subsequent digital signal conditioning with robust circuit design and a matched signal to noise ratio.The monolithic integration of transducer and electronics will be done serial by means of post CMOS integration. The primary electronics and the transducing transistors will be processed in a standard CMOS process. Therefore a 180 nanometer technology of the foundry company XFAB is used. Afterwards the near surface resonator structures will be processed at the Center for Microtechnologies of the TU Chemnitz. For processing the micromechanical structures at the TU Chemnitz it is necessary to use whole wafers.Scientific findings are expected from the investigations of circuit principles with respect to parameter variation, useful effects on the base of device physics, the compatibility of CMOS and micromechanical processing and the realization of monolithically integrated arrays of resonant sensors for measuring vibrations and acoustic emissions.

• DFG Programme: Research Units
• Subproject of: FOR 1713: Sensoric Micro- and Nanosystems
• Participating Person: Professor Dr. Thomas Geßner (†)