Graphene on SiC wafers for high performant RF transistors GRAPHIC RF

The project aims to improve the basic knowledge on epitaxial graphene growth on SiC to establish the possibility to obtain the electronics quality required for Rf device fabrication. Different polytypes will be considered.simulations will be implemented. Standards and references will be established. Rf devices will be fabricated and characterised. Also other advanced devices will be considered.

DFG-Verfahren Sachbeihilfen

Internationaler Bezug Frankreich, Italien, Schweden

Beteiligte Personen Dr. Jean Camassel; Dr. Vito Raineri; Professorin Dr. Rositza Yakimova