Graphene on SiC wafers for high performant RF transistors GRAPHIC RF
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Experimental Condensed Matter Physics
Term
from 2010 to 2016
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 163392002
The project aims to improve the basic knowledge on epitaxial graphene growth on SiC to establish the possibility to obtain the electronics quality required for Rf device fabrication. Different polytypes will be considered.simulations will be implemented. Standards and references will be established. Rf devices will be fabricated and characterised. Also other advanced devices will be considered.
DFG Programme
Research Grants
International Connection
France, Italy, Sweden
