ERA NanoSci - Interfacing Functional Nanocomposites for Non-Volatile Memory Devices

The continuous demand for device miniaturization poses technological and economic barriers that cannot be answered by current fabrication techniques. This proposal is aimed at the development of a simple technique for the fabrication of crossbar electrode arrays for non-volatile memory devices based on a modulated block copolymer/nanoparticle (BCP/NP) assembly approach, where the ability to control the interfacial interactions between the NPs and the BCP domains under an electric field is crucial for obtaining the desired structure. Through a tight collaboration between experimental chemists, theoreticians, and an electrical engineer we intend to unravel the fundamental behavior of BCP/NP assembly under the influence of a directing electric field, and then to utilize the structures formed for the creation of an ultrahigh-density, multi-component memory device.

DFG-Verfahren Sachbeihilfen

Internationaler Bezug Großbritannien, Israel, Niederlande

Beteiligte Personen Dr. G.J. Agur Sevink; Professor Dr. Roy Shenhar; Professor Dr. Nir Tessler; Professor Andrei Zvelindovsky, Ph.D.